Experimental temperature dependence of fluctuations in germanium and silicon
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference11 articles.
1. Experimental studies on 1/f noise
2. Lattice scattering causes 1/ƒ noise
3. Semiconductors;Smith,1978
4. Lattice-Scattering Mobility in Germanium
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1. An Intermittent Generation–Recombination Process as a Possible Origin of 1/f Fluctuations in Semiconductor Materials;Fluctuation and Noise Letters;2017-11-21
2. Semiconductor-metal interface influence on the bulk low-frequency noise behavior and role of the phonons refraction points;SPIE Proceedings;2005-05-23
3. 1/f NOISE DUE TO ATOMIC DIFFUSION OF IMPURITY CENTERS IN SEMICONDUCTORS;Fluctuation and Noise Letters;2001-12
4. Temperature Chaos and the Lattice Character of the Hooge Parameter in Semiconductors;Modern Physics Letters B;1998-12-30
5. The temperature dependence of noise in InP;Solid-State Electronics;1997-09
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