Morphological and optical characterization of GaN prepared by pulsed laser deposition-Reference-Cited by-同舟云学术

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Morphological and optical characterization of GaN prepared by pulsed laser deposition

Published:2000-02 Issue:2-3 Volume:124 Page:272-277
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Vinegoni C,Cazzanelli M,Trivelli A,Mariotto G,Castro J,Lunney J.G,Levy J

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference29 articles.

1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. High-brightness light-emitting diodes grown by molecular beam epitaxy on ZnSe substrates

4. InGaN‐GaN based light‐emitting diodes over (111) spinel substrates

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1. Synthesis of gallium nitride nanostructure using pulsed laser ablation in liquid for photoelectric detector;Materials Science in Semiconductor Processing;2022-11

2. Structural and Optical Properties of GaN Thin Films Grown on Si (111) by Pulsed Laser Deposition;Materials Research;2019

3. Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices;Surface Science Reports;2015-11

4. Low Temperature Growth of GaN Epitaxial Layers on Sapphire (0001) by Pulsed Laser Deposition Using Liquid Gallium Target;Science of Advanced Materials;2014-06-01

5. Nitridation effect of the α-Al2O3 substrates on the quality of the GaN films grown by pulsed laser deposition;RSC Adv.;2014

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