High-brightness light-emitting diodes grown by molecular beam epitaxy on ZnSe substrates-Reference-Cited by-同舟云学术

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High-brightness light-emitting diodes grown by molecular beam epitaxy on ZnSe substrates

Published:1995-07 Issue:4 Volume:13 Page:1566
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Eason D. B.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Speed Visible Light Communications Using ZnSe-Based White Light Emitting Diode;IEEE Photonics Technology Letters;2016-09-15

2. Subsurface damage in (100) ZnSe introduced by mechanical polishing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08

3. Assessment of subsurface damage in polished II–VI semiconductors by ion channeling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06

4. Growth and characterization of Br-doped ZnSe single crystals grown by a vertical sublimation method;Journal of Crystal Growth;2001-07

5. Contactless growth of ZnSe single crystals by physical vapor transport;Journal of Crystal Growth;2000-06

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