Role of ion bombardment in forming CNx and CNxHy films deposited by r.f.-magnetron reactive sputtering and ECR plasma-activated CVD methods-Reference-Cited by-同舟云学术

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Role of ion bombardment in forming CNx and CNxHy films deposited by r.f.-magnetron reactive sputtering and ECR plasma-activated CVD methods

Published:1999-03 Issue:1-2 Volume:113 Page:134-139
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Shaginyan L.R.,Onoprienko A.A.,Vereschaka V.M.,Fendrych F.,Vysotsky V.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference19 articles.

1. Structural properties and electronic structure of low-compressibility materials: β-Si3N4and hypothetical β-C3N4

2. Hard Carbon Coatings: The Way Forward

3. L.R Shaginyan, Powder Metallurgy, 11/12 (1998).

4. Deposition mechanisms for promoting sp3 bonding in diamond-like carbon

5. Preferential sputtering of Ta2O5 by argon ions

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1. Synthesis and optical characterization of amorphous carbon nitride thin films by hot filament assisted RF plasma CVD;Vacuum;2003-01

2. Role of H2 in the deposition of CN layers by PE-HF-CVD;Surface and Coatings Technology;2003-01

3. The effect of ammonia/dimethylamine ratio in deposition of hydrogenated CNx films by PE-HF-CVD;Diamond and Related Materials;2002-12

4. Bonding structure of carbon nitride films by infrared ellipsometry;Physical Review B;2001-09-11

5. EFFECT OF LOW-ENERGY DEPOSITION PARTICLES ON INITIAL STAGE OF THIN FILM;Acta Physica Sinica;2001

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