Interplay between random and chemically guided effects in Kr+-bombarded Ti/Si bilayers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference10 articles.
1. Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures
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1. Low-energy Ar+ ion-beam induced vanadium silicide formation at V/Si interfaces;Thin Solid Films;2009-02
2. Chromium silicide formation by argon irradiation of Cr/Si bilayers;Journal of Physics D: Applied Physics;2008-01-09
3. The application of ITTFA and ARXPS to study the ion beam mixing of metal/Si bilayers;Surface and Interface Analysis;2008
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5. Nanoscale reactive ion beam mixing of Ti/Si and Si/Ti interfaces;Thin Solid Films;2007-02
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