Low-energy Ar+ ion-beam induced vanadium silicide formation at V/Si interfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference43 articles.
1. Silicides for VLSI Applications;Murarka,1983
2. Growth kinetics of CoSi formed by ion beam irradiation at room temperature
3. Atomic mixing and interface reactions in Ta/Si bilayers during noble-gas ion irradiation
4. Swift heavy ion induced modification of the Co/Si interface; cobalt silicide formation
5. Ion-beam mixing in Fe/Si bilayers by singly and highly charged ions: evolution of phases, spike mechanism and possible effects of the ion-charge state
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