Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices’ Variability?-Reference-Cited by-同舟云学术

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Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices’ Variability?

Published:2011 Issue: Volume:7 Page:266-268
ISSN:1877-0509
Container-title:Procedia Computer Science
language:en
Short-container-title:Procedia Computer Science

Author:

Jehl X.,Roche B.,Sanquer M.,Voisin B.,Wacquez R.,Deshpande V.,Previtali B.,Vinet M.,Verduijn J.,Tettamanzi G.C.,Rogge S.,Kotekar-Patil D.,Ruoff M.,Kern D.,Wharam D.A.,Belli M.,Prati E.,Fanciulli M.

Publisher

Elsevier BV

Subject

General Engineering

Reference7 articles.

1. Simple and controlled single electron transistor based on doping modulation in silicon nanowires

2. Symposium on VLSI Technology;Wacquez,2010

3. Single-donor ionization energies in a nanoscale CMOS channel

4. Individual charge traps in silicon nanowires

5. Single-dopant resonance in a single-electron transistor

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