Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons
Author:
Affiliation:
1. Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, 08-03 Innovis, 138634 Singapore
2. Department of Physics, National University of Singapore, 2 Science Drive 3, 117551 Singapore
Funder
Agency for Science, Technology and Research
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00390
Reference42 articles.
1. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
2. High Performance Multilayer MoS2 Transistors with Scandium Contacts
3. High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts
4. Electrical characteristics of metal/semiconductor nanocontacts using light emission in a scanning tunneling microscope
5. Textured MoS2 thin films obtained on tungsten: Electrical properties of the W/MoS2 contact
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