高纵横比单层MoS2纳米-微米带的可控合成及其在高性能光电晶体管中的应用-Reference-Cited by-同舟云学术

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高纵横比单层MoS2纳米-微米带的可控合成及其在高性能光电晶体管中的应用

Published:2023-09-21 Issue:10 Volume:66 Page:3941-3948
ISSN:2095-8226
Container-title:Science China Materials
language:en
Short-container-title:Sci. China Mater.

Author:

Jian Pengcheng,Tan Shizhou,Zheng Zhihua,Liu Weijie,Zhao Yongming,Xu Dan,Wang Peng,Dai Jiangnan,Wu Feng,Chen Changqing

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s40843-023-2569-8.pdf

Reference40 articles.

1. Zhang Y, Yao Y, Sendeku MG, et al. Recent progress in CVD growth of 2D transition metal dichalcogenides and related heterostructures. Adv Mater, 2019, 31: 1901694

2. Splendiani A, Sun L, Zhang Y, et al. Emerging photoluminescence in monolayer MoS2. Nano Lett, 2010, 10: 1271–1275

3. Akinwande D, Petrone N, Hone J. Two-dimensional flexible nanoelectronics. Nat Commun, 2014, 5: 5678

4. Kirubasankar B, Won YS, Adofo LA, et al. Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications. Chem Sci, 2022, 13: 7707–7738

5. Liu Y, Gu F. A wafer-scale synthesis of monolayer MoS2 and their field-effect transistors toward practical applications. Nanoscale Adv, 2021, 3: 2117–2138

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2. Vanadium Metal Doping of Monolayer MoS₂ for p-Type Transistors and Fast-Speed Phototransistors;ACS Applied Materials & Interfaces;2024-04-24

3. Large-scale synthesis and exciton dynamics of monolayer MoS₂ on differently doped GaN substrates;Nanophotonics;2023-11-22

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