Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices
Author:
Publisher
Elsevier BV
Subject
General Materials Science
Reference20 articles.
1. Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3MBE
2. Dual trench AlGaN/GaN HEMT on SiC substrate: A novel device to improve the breakdown voltage and high power performance
3. Comparison of electrical, optical and structural properties of epitaxially grown HEMT's type AlGaN/AlN/GaN heterostructures on Al2O3, Si and SiC substrates
4. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
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1. Influence of Post-Bonding Annealing Treatment on Interface Characteristics of Si-Si Wafer Bonded via Room Temperature Surface Activation;Journal of Materials Engineering and Performance;2023-11-21
2. Investigation on the thermal aberration of Nd:YAG on SiC fabricated by room temperature bonding with a Mo/Au nano-interlayer;Optical Materials Express;2023-06-13
3. Random laser emission from dye-doped polymer films enhanced by SiC nanowires;Journal of Physics D: Applied Physics;2023-04-12
4. Tuning the interlayer microstructure and residual stress of buffer-free direct bonding GaN/Si heterostructures;Applied Physics Letters;2023-02-20
5. Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding;Crystals;2023-01-24
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