Inhomogeneous sources of misfit dislocation generation in In xGa1− xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Inhomogeneous sources of misfit dislocation generation in In xGa1− xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy

Published:1997-08 Issue:4 Volume:28 Page:309-312
ISSN:0968-4328
Container-title:Micron
language:en
Short-container-title:Micron

Author:

Zou J.,Cockayne D.J.H.,Russell-Harriott J.J.,Moon A.R.

Publisher

Elsevier BV

Subject

Cell Biology,Structural Biology,General Physics and Astronomy,General Materials Science

Reference20 articles.

1. Microtwinning and growth defects in GaAs MBE layers;Bafleur;Journal of Crystal Growth,1982

2. Source and elimination of oval defects on GaAs films grown by molecular beam epitaxy;Chai;Applied Physics Letters,1981

3. On the origin of misfit dislocations in InGaAs/GaAs strained layers;Dixon;Journal of Applied Physics,1990

4. New source of dislocations in Ge xSi1− x/Si (100) strained epitaxial layers;Eaglesham;Physics Review Letters,1989

5. Dislocation structure, formation, and minority-carrier recombination in AlGaAs/InGaAs/GaAs heterojunction bipolar transitors;Fitzgerald;Journal of Applied Physics,1988

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy;Applied Physics Letters;1998-12-28

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