Antiphase disorder in GaAs/Ge heterostructures for solar cells-Reference-Cited by-同舟云学术

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Antiphase disorder in GaAs/Ge heterostructures for solar cells

Published:2000-06 Issue:3 Volume:31 Page:217-222
ISSN:0968-4328
Container-title:Micron
language:en
Short-container-title:Micron

Author:

Lazzarini L.,Nasi L.,Salviati G.,Fregonara C.Z.,Li Y.,Giling L.J.,Hardingham C.,Holt D.B.

Publisher

Elsevier BV

Subject

Cell Biology,Structural Biology,General Physics and Astronomy,General Materials Science

Reference19 articles.

1. Antiphase domains in GaAs grown by metalorganic chemical vapor deposition on silicon-on-insulator;Chu;J. Appl. Phys.,1988

2. Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy;Fisher;J. Appl. Phys.,1985

3. Material properties of high quality GaAs epitaxial layers grown on Si substrates;Fisher;J. Appl. Phys.,1986

4. Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxy;Fitzgerald;Appl. Phys. Lett.,1994

5. Microstructural study of GaAs epitaxial layers on Ge (100) substrates;Guelton;J. Mater. Res.,1995

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1. Characteristics of Native Oxides-Interfaced GaAs/Ge np Diodes;IEEE Electron Device Letters;2024-09

2. Growth-related photoluminescence properties of InSb/GaAs self-assembled quantum dots grown on (001) Ge substrates;Materials Science and Engineering: B;2021-09

3. Epitaxial Ge Solar Cells Directly Grown on Si (001) by MOCVD Using Isobutylgermane;Journal of the Korean Physical Society;2018-03

4. Stability and controllability of InGaAs/GaAsP wire-on-well (WoW) structure for multi-junction solar cells;Journal of Crystal Growth;2017-04

5. Raman and photoluminescence properties of type II GaSb/GaAs quantum dots on (001) Ge substrate;Electronic Materials Letters;2016-07

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