Investigation of Mn incorporation in fifteen-period InGaAs/GaAs quantum well system-Reference-Cited by-同舟云学术

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Investigation of Mn incorporation in fifteen-period InGaAs/GaAs quantum well system

Published:2014-08 Issue:8 Volume:14 Page:1063-1066
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Yoon Im Taek,Lee Sejoon,Shon Yoon,Kwon Younghae,Park Chang Soo,Lee Cheol Jin,Kang Tae Won

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference21 articles.

1. Making Nonmagnetic Semiconductors Ferromagnetic

2. Magnetotransport properties ofp-type (In,Mn)As diluted magnetic III-V semiconductors

3. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

4. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of the Quantum Well Structure and Growth Temperature on a Five-Layer InGaMnAs Quantum Well with an InGaAs Buffer Layer;Journal of Nanoscience and Nanotechnology;2018-06-01

2. Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure;Journal of Electronic Materials;2016-10-21

3. Ferromagnetism of Twenty-Period InGaMnAs/InGaAs Quantum Wells with Superlattice Structure;Journal of Superconductivity and Novel Magnetism;2015-06-06

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