Influence of the Quantum Well Structure and Growth Temperature on a Five-Layer InGaMnAs Quantum Well with an InGaAs Buffer Layer-Reference-Cited by-同舟云学术

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Influence of the Quantum Well Structure and Growth Temperature on a Five-Layer InGaMnAs Quantum Well with an InGaAs Buffer Layer

Published:2018-06-01 Issue:6 Volume:18 Page:4355-4359
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Yoon Im Taek¹,Lee Sejoon²,Roshchupkin Dmitry V³,Panin Gennady N³

Affiliation:

1. A Quantum Functional Semiconductor Research Center, Dongguk University, Seoul, 100-715, Korea

2. Department of Physics and Semiconductor Science, Dongguk University, Seoul, 100-715, Korea

3. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka 142432, Russian Federation

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

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