Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference36 articles.
1. GaN based transistors for high power applications
2. AlGaN/AlN/GaN high-power microwave HEMT
3. Influence of AlN interfacial layer on electrical properties of high-Al-content Al 0.45 Ga 0.55 N/GaN HEMT structure
4. AlGaN/GaN microwave HFET including a thin AlN carrier exclusion layer
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1. Simulation-based optimization of barrier and spacer layers in InAlN/GaN HEMTs for improved 2DEG density;Micro and Nanostructures;2024-11
2. Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In0.17Al0.83N/GaN High-Electron-Mobility Transistor;Physics of the Solid State;2024-06
3. A novel p-GaN HEMT with AlInN/AlN/GaN double heterostructure and InAlGaN back-barrier;Microelectronics Reliability;2023-06
4. Phonon-assisted reduction of hot spot temperature in AlInN ternaries;Journal of Physics D: Applied Physics;2020-06-24
5. In situ wafer curvature measurement and strain control of AlInN/GaN distributed Bragg reflectors;Applied Physics Express;2020-04-20
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