Design optimization of vertical nanowire tunneling field-effect transistor based on AlGaSb/InGaAs heterojunction layer-Reference-Cited by-同舟云学术

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Design optimization of vertical nanowire tunneling field-effect transistor based on AlGaSb/InGaAs heterojunction layer

Published:2016-07 Issue:7 Volume:16 Page:681-685
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Eun Hye Rim,Yoon Young Jun,Seo Jae Hwa,Cho Min Su,Lee Jung-Hee,Kwon Hyuck-In,Kang In Man

Funder

Ministry of Education, Science and Technology

National Research Foundation of Korea

Samsung

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference37 articles.

1. More Accurate and Reliable Extraction of Tunneling Resistance in Tunneling FET and Verification in Small-Signal Circuit Operation

2. Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors

3. Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization

4. Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors

5. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

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3. Charge-plasma-based inverted T-shaped source-metal dual-line tunneling FET with improved performance at 0.5 V operation;Physica Scripta;2023-08-09

4. Cold source field-effect transistors: Breaking the 60-mV/decade switching limit at room temperature;Physics Reports;2023-04

5. A novel broken-gap chemical-bonded SiC/Ti₂CO₂ heterojunction with band to band tunneling: first-principles investigation;Physical Chemistry Chemical Physics;2023

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