Improving the electrical performance of HfInZnO-TFTs by introducing a thin ITO interlayer
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference26 articles.
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1. Improvement of properties of top-gate IGZO TFT by oxygen-rich ultrathin in situ ITO active layer;Japanese Journal of Applied Physics;2022-07-01
2. Investigation of the electrical properties and stability of HfInZnO thin-film transistors;Chinese Journal of Physics;2020-12
3. Effect of Electron Beam Annealing Duration on the Properties of Zno Thin Films;IOP Conference Series: Materials Science and Engineering;2019-12-01
4. Performance Enhancement of TiZO Thin Film Transistors by Introducing a Thin ITO Interlayer;IEEE Journal of the Electron Devices Society;2019
5. The modification of electrical properties of Au/n-Hg3In2Te6 Schottky contact by the introduction of ITO interlayer;Current Applied Physics;2016-06
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