Investigation of the electrical properties and stability of HfInZnO thin-film transistors-Reference-Cited by-同舟云学术

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Investigation of the electrical properties and stability of HfInZnO thin-film transistors

Published:2020-12 Issue: Volume:68 Page:788-795
ISSN:0577-9073
Container-title:Chinese Journal of Physics
language:en
Short-container-title:Chinese Journal of Physics

Author:

Abliz Ablat,Rusul Abdujappar,Duan Haiming,Maimaiti Ahemaitijiang,Yang Linyu,Zhang Min,Yang Zhenyu

Funder

National Natural Science Foundation of China

Natural Science Foundation of the Xinjiang Uygur Autonomous Region of China

Doctoral Program of the Tian Chi Foundation of the Xinjiang Uygur Autonomous Region of China

Doctoral Program Foundation of Xinjiang University

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference35 articles.

1. Recent advances in understanding the structure and properties of amorphous oxide semiconductors;Medvedeva;Adv. Electron. Mater.,2017

2. A short review on: optimization techniques of ZnO based thin film transistors;Vyas;Chin. J. Phys.,2018

3. Investigation on the electrical performances and stability of W-doped ZnO thin-film transistors;Abliz;Mater. Sci. Semicond. Process.,2019

4. Design of highly stable tungsten-doped IZO thin-film transistors with enhanced performance;Wan;IEEE Trans. Electron Devices,2018

5. Temperature-dependent instability of bias stress in InGaZnO thin-film transistors;Chang;IEEE Trans. Electron Devices,2014

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1. Synergy of indium doping and hydrogenation for good-performance and high-mobility ZnO electrode films;Journal of Science: Advanced Materials and Devices;2023-09

2. Impact of hydrogen plasma treatment on the electrical performances of ZnO thin-film transistors;Chinese Journal of Physics;2022-06

3. Fabrication and characterization of ZnO/Al₂O₃ thin film transistors: channel length effect study;2022 19th International Multi-Conference on Systems, Signals & Devices (SSD);2022-05-06

4. Schottky Contact-induced Hump Phenomenon by Bias and Optical Stresses in Amorphous Oxide Thin Film Transistor;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2022-02-28

5. X‐ray photoelectron spectroscopy characterization of band offsets of MgO/Mg 2 Si and SiO 2 /Mg 2 Si heterojunctions;Surface and Interface Analysis;2021-07-16

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