Modeling of transient and steady-state dark current in amorphous silicon p–i–n photodiodes
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference21 articles.
1. Light induced degradation in amorphous silicon photodiodes and implication for diagnostic medical imaging application
2. Hole-mobility limit of amorphous silicon solar cells
3. Comparative study on the radiation damage of a-Si:H p-i-n diodes made by PECVD and ion shower doping
4. Long-time transient conduction in a-Si:H p─i─n devices
5. Size and Etching Effects on the Reverse Current of a-Si:H p-i-n Diodes
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1. a-Si:H p-i-n Photodiode as a Biosensor;Photodetectors [Working Title];2018-11-05
2. Deposition time effects on optical gap, dark conductivity and X-ray photoresponse properties of thermal evaporated a-Se thin films;Journal of Materials Science: Materials in Electronics;2018-09-15
3. Photoconductors for X-Ray Image Detectors;Springer Handbook of Electronic and Photonic Materials;2017
4. Dark current mechanisms in amorphous selenium-based photoconductive detectors: an overview and re-examination;Journal of Materials Science: Materials in Electronics;2015-01-14
5. Transient and steady-state dark current mechanisms in polycrystalline mercuric iodide X-ray imaging detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2014-02
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