Long-time transient conduction in a-Si:H p─i─n devices
Author:
Affiliation:
1. a Xerox Palo Alto Research Center , Palo Alto , California , 94304 , U.S.A
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819108205566
Reference23 articles.
1. Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states
2. Trap spectroscopy of a-Si:H diodes using transient current techniques
3. Goldie , D. Le Comber , P. G. and Spear , W. E. 1991. (to be published)
4. Kinetics of Carrier-Induced Metastable defect Formation in Hydrogenated Amorphous Silicon
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