Author:
Li Jitao,Zhu Xinghua,Xie Qingshuang,Pu Guolin,Yang Dingyu
Funder
Natural Science Foundation of China
National Natural Science Foundation of China
Department of Science and Technology of Sichuan Province
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. N. Hijazi, D. Panneerselvam, M.Z. Kabir, Electron-hole pair creation energy in amorphous selenium for high energy photon excitation. J. Mater. Sci.: Mater. Electron. 29, 486–490 (2018)
2. M. Tomoaki, K. Shingo, O. Masanori, K. Richika, S. Ichitaro, Y. Takatoshi, T. Angel, T. Koh, H. Daniel, C. Chua, Conditions for a carrier multiplication in amorphous-selenium based photodetector. Appl. Phys. Lett. 102, 073506 (2013)
3. A.V. Kolobov, P. Fons, Insights into the physics and chemistry of chalcogenides obtained from X-ray absorption spectroscopy. Semicond. Sci. Technol. 32, 123003 (2017)
4. S. Gayathri, S. Sridevi, S. Asokan, Investigations on photo-mechanical and photo-thermo-mechanical strain variations in amorphous selenium using fiber Bragg grating sensor. J. Non-Cryst. Solids 477, 7–11 (2017)
5. A. Shiva, T. Alireza, S.W. William, S.K. Karim, Enhanced dark current suppression of amorphous selenium detector with use of IGZO hole blocking layer. IEEE Trans. Electron. Dev. 61, 3355–3357 (2014)