Influence of rapid thermal annealing on electrical and structural properties of double metal structure Au/Ni/n-InP (111) diodes
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference35 articles.
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2. Physics of Semiconductor Devices;Sze,1981
3. Electron trapping in thin oxide on n-InP
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5. Characteristics of MOS solar cells built on (n-type) InP substrates
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1. Annealing effect on I-V and C-V characteristics of Al/n-InP Schottky diodes at low temperatures;Materials Today: Proceedings;2021
2. Effect of annealing temperature on the electrical, structural and surface morphological properties of Ru/Ti Schottky contacts on n -type InP;Superlattices and Microstructures;2015-10
3. Rapid thermal annealing effects on the electrical and structural properties of Ru/V/n-InP Schottky barrier diode;Superlattices and Microstructures;2015-07
4. Electrical and structural properties of tungsten Schottky contacts to p-type InP at different annealing temperatures;Superlattices and Microstructures;2014-07
5. The convergence of longitudinal excitons onto the Γ5transverse exciton in GaN and the thermal activation energy of longitudinal excitons;Journal of Physics: Condensed Matter;2013-07-24
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