Electrical and structural properties of tungsten Schottky contacts to p-type InP at different annealing temperatures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference32 articles.
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3. A new method to fabricate Au/n-type InP Schottky contacts with an interfacial layer
4. Electrical characterization of metal-oxide-InP tunnel diodes based on current-voltage, admittance and low frequency noise measurements
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