High performance solution-deposited bilayer channel indium–zinc-oxide thin film transistors by low-temperature microwave annealing
Author:
Funder
Ministry of Education, Science and Technology
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference22 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
3. Effects of O2 plasma treatment on low temperature solution-processed zinc tin oxide thin film transistors
4. Fabrication conditions for solution-processed high-mobility ZnO thin-film transistors
5. Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistors
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1. Verifying the physical role of upper-active-layer on charge transport together with bias stability in bilayer-channel oxide thin-film transistors;Surfaces and Interfaces;2024-08
2. Combustion Synthesis and Polymer Doping of Metal Oxides for High-Performance Electronic Circuitry;Accounts of Chemical Research;2022-01-19
3. A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics;Advanced Functional Materials;2019-09-06
4. Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics;Proceedings of the National Academy of Sciences;2019-04-19
5. Reduced parasitic contact resistance and highly stable operation in a-In-Ga-Zn-O thin-film transistors with microwave treatment;Thin Solid Films;2016-11
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