Effects of O2 plasma treatment on low temperature solution-processed zinc tin oxide thin film transistors-Reference-Cited by-同舟云学术

Effects of O2 plasma treatment on low temperature solution-processed zinc tin oxide thin film transistors

Published:2013-05-02 Issue:9 Volume:210 Page:1745-1749
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lee Jeong-Soo¹,Song Seung-Min¹,Kim Yong-Hoon²,Kwon Jang-Yeon³,Han Min-Koo¹

Affiliation:

1. School of Electrical Engineering and Computer Science; Seoul National University; Seoul 151-742 Korea

2. Flexible Display Research Center; Korea Electronics Technology Institute; Seongnam Gyeonggi 463-070 Korea

3. School of Integrated Technology; Yonsei University; Incheon 406-840 Korea

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201329170/fullpdf

Reference16 articles.

1. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

2. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

3. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

4. High performance solution-processed amorphous zinc tin oxide thin film transistor

5. Effect of Zinc/Tin Composition Ratio on the Operational Stability of Solution-Processed Zinc–Tin–Oxide Thin-Film Transistors

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