Interface and bulk properties of Cu(In,Ga)Se 2 solar cell with a cracker-ZnS buffer layer-Reference-Cited by-同舟云学术

Interface and bulk properties of Cu(In,Ga)Se 2 solar cell with a cracker-ZnS buffer layer

Published:2018-04 Issue:4 Volume:18 Page:405-410
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Lee Woo-Jung,Cho Dae-Hyung^ORCID,Yoo Jisu,Yoo Jengsu,Wi Jae-Hyung^ORCID,Han Won Seok,Nam Yoonsung,Yi Yeonjin^ORCID,Chang Soo-Kyung,Chung Yong-Duck^ORCID

Funder

'New & Renewable Energy' of a Korea Institute of Energy Technology Evaluation and Planning

Korean government Ministry Of Trade, Industry & Energy

Technology Development Program to Solve Climate Changes of the National Research Foundation

Ministry of Science, ICT and Future Planning

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference29 articles.

1. Properties of Cu(In,Ga)Se2 solar cells with new record efficiencies up to 21.7%

2. 19·9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor

3. New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%

4. Ag incorporation in low-temperature grown Cu(In,Ga)Se2 solar cells using Ag precursor layers

5. Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18%

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