Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18%-Reference-Cited by-同舟云学术

Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18%

Published:2013-11-28 Issue:2 Volume:22 Page:161-165
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Klenk Reiner¹,Steigert Alexander¹,Rissom Thorsten¹,Greiner Dieter¹,Kaufmann Christian A.¹,Unold Thomas¹,Lux-Steiner Martha Ch.¹

Affiliation:

1. Helmholtz-Zentrum-Berlin für Materialien und Energie; Hahn-Meitner-Platz 1 D14109 Berlin Germany

Funder

German Federal Ministry of Education and Research

German Federal Ministry for the Environment, Nature Conservation and Nuclear Safety

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pip.2445/fullpdf

Reference17 articles.

1. Surface treatment of CuInGaSe2 thin films and its effect on the photovoltaic properties of solar cells;Ramanathan;Journal of Physics and Chemistry of Solids,2003

2. Potential distribution of Cu(In,Ga)(S,Se)2-solar cell cross-sections measured by Kelvin probe force microscopy;Glatzel;Thin Solid Films,2005

3. Zimmermann U Ruth M Edoff M Cadmium-free CIGS mini-modules with ALD-grown Zn(O,S)-based buffer layers Proceedings of the 21st European Photovoltaic Solar Energy Conference 2006 1831 1834

4. Junction formation in chalcopyrite solar cells by sputtered wide gap compound semiconductors;Grimm;Thin Solid Films,2011

5. Application of sputtered ZnO1-x Sx buffer layers for Cu(In,Ga)Se2 solar cells;Okamoto;Japanese Journal of Applied Physics,2011

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