Junction formation in chalcopyrite solar cells by sputtered wide gap compound semiconductors-Reference-Cited by-同舟云学术

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Junction formation in chalcopyrite solar cells by sputtered wide gap compound semiconductors

Published:2011-12 Issue:4 Volume:520 Page:1330-1333
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Grimm A.,Kieven D.,Klenk R.,Lauermann I.,Neisser A.,Niesen T.,Palm J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Buffer layers and transparent conducting oxides for chalcopyrite Cu(In,Ga)(S,Se)2 based thin film photovoltaics: present status and current developments

2. Characterisation and modelling of chalcopyrite solar cells

3. Proc. 6th International Photovoltaic Science and Engineering Conf. (PVSEC-6), New Delhi, India;Kessler,1992

4. Quality and stability of compound indium sulphide as source material for buffer layers in Cu(In,Ga)Se2 solar cells

5. Band alignment at Sb2S3/Cu(In,Ga)Se2 heterojunctions and electronic characteristics of solar cell devices based on them

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