The Photovoltaic Cell Based on CIGS: Principles and Technologies

Abstract

Semiconductors used in the manufacture of solar cells are the subject of extensive research. Currently, silicon is the most commonly used material for photovoltaic cells, representing more than 80% of the global production. However, due to its very energy-intensive and costly production method, other materials appear to be preferable over silicon, including the chalcopyrite-structured semiconductors of the CIS-based family (Cu(In, Ga, Al) (Se, S)2). Indeed, these compounds have bandwidths between 1 eV (CuInSe2) and 3 eV (CuAlS2), allowing them to absorb most solar radiation. Moreover, these materials are currently the ones that make it possible to achieve the highest photovoltaic conversion efficiencies from thin-film devices, particularly Cu(In, Ga)Se2, which is considered the most efficient among all drifts based on CIS. In this review, we focus on the CIGS-based solar cells by exploring the different layers and showing the recent progress and challenges.