Nanocrystalline silicon films deposited with a modulated hydrogen dilution ratio by catalytic CVD at 200°C
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference10 articles.
1. High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition
2. Effect of localized traps on the anomalous behavior of the transconductance in nanocrystalline TFTs
3. Phosphorous and boron doping of nc-Si:H thin films deposited on plastic substrates at 150 °C by Hot-Wire Chemical Vapor Deposition
4. Control of Polycrystalline Silicon Structure by the Two-Step Deposition Method
5. High quality nanocrystalline silicon thin film fabricated by inductively coupled plasma chemical vapor deposition at 350°C
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