Control of Polycrystalline Silicon Structure by the Two-Step Deposition Method
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study of Nanocrystalline Silicon Films Synthesized Below 100 °C by Catalytic Chemical Vapor Deposition;Journal of Nanoscience and Nanotechnology;2013-11-01
2. Reduction of amorphous incubation layer by HCl addition during deposition of microcrystalline silicon by hot-wire chemical vapor deposition;Solar Energy Materials and Solar Cells;2011-01
3. Properties of SiGe Films Fabricated by Reactive Thermal Chemical Vapor Deposition Using Lamp Heating;Japanese Journal of Applied Physics;2010-04-20
4. Nanocrystalline silicon films deposited with a modulated hydrogen dilution ratio by catalytic CVD at 200°C;Current Applied Physics;2009-03
5. Direct Deposition of Poly-Si Films at a High Rate by Using Catalytic CVD at a Low Temperature (180 ¨?C);Journal of the Korean Physical Society;2009-01-15
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