The nc-Si films with controlled crystal structure and electrical conductivity via the re-crystallization approach-Reference-Cited by-同舟云学术

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The nc-Si films with controlled crystal structure and electrical conductivity via the re-crystallization approach

Published:2013-01 Issue: Volume:359 Page:40-45
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Yang Fei,Li Xiang,Ren Zhaohui,Xu Gang,Liu Yong,Shen Ge,Han Gaorong

Funder

Fundamental Research Funds for the Central Universities

Research Fund for the Doctoral Program of Higher Education of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Silicon thin film solar cells deposited under 80°C

2. High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition

3. Material and solar cell research in microcrystalline silicon

4. Rapid, low-temperature synthesis of nc-Si in high-density, non-equilibrium plasmas: enabling nanocrystallinity at very low hydrogen dilution

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2. High-Quality Nanocrystalline Silicon (nc-Si:H) Thin Film With Mixed-Phase and Its Application of Circulating Tumor Cell DEP Biochip;IEEE Access;2023

3. Ostwald ripening in segregated SixN/SiyN multilayers;physica status solidi (a);2016-06-29

4. Influence of annealing on microstructure and piezoresistive properties of boron-doped hydrogenated nanocrystalline silicon thin films prepared by PECVD;Journal of Materials Science: Materials in Electronics;2015-05-19

5. Solid-phase crystallization of high growth rate amorphous silicon films deposited by gas-jet electron beam plasma CVD method;Canadian Journal of Physics;2014-07

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