Effect of post annealing on the characteristics of In2S3 buffer layer grown by chemical bath deposition on a CIGS substrate-Reference-Cited by-同舟云学术

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Effect of post annealing on the characteristics of In2S3 buffer layer grown by chemical bath deposition on a CIGS substrate

Published:2015-12 Issue:12 Volume:15 Page:1641-1649
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Omelianovych Andrii,Kim Ji Hye,Liudmila Larina,Ahn Byung Tae

Funder

Korean Ministry of Science and Technology

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference37 articles.

1. ZnO/InxSy/Cu(In,Ga)Se2 solar cells fabricated by coherent heterojunction formation

2. Quality and stability of compound indium sulphide as source material for buffer layers in Cu(In,Ga)Se2 solar cells

3. High-efficiency copper indium gallium diselenide (CIGS) solar cells with indium sulfide buffer layers deposited by atomic layer chemical vapor deposition (ALCVD)

4. High efficiency cadmium free Cu(In,Ga)Se2 thin film solar cells terminated by an electrodeposited front contact

5. D. Hariskos, M. Ruckh, U. Riihle, T. Walter, H. W. Schock, J. Hedstroem, L. Stolt, 41/42, 345–353, 1996.

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfacial defect healing of In₂S₃/Sb₂(S,Se)₃ heterojunction solar cells with a novel wide-bandgap InOCl passivator;Journal of Materials Chemistry A;2023

2. Interfacial Engineering of In2O3/In2S3 Heterojunction Photoanodes for Photoelectrochemical Water Oxidation;Electronic Materials Letters;2022-05-30

3. A Thin In 2 S 3 Interfacial Layer for Reducing Defects and Roughness of Cu 2 ZnSn(S,Se) 4 Thin‐Film Solar Cells;ChemSusChem;2022-01-27

4. Metal dithiocarbamates as useful precursors to metal sulfides for application in quantum dot-sensitized solar cell;Sustainable Materials and Green Processing for Energy Conversion;2022

5. β-In2S3 as Water Splitting Photoanodes: Promise and Challenges;Electronic Materials Letters;2021-01-18

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