Interfacial defect healing of In2S3/Sb2(S,Se)3 heterojunction solar cells with a novel wide-bandgap InOCl passivator-Reference-Cited by-同舟云学术

Interfacial defect healing of In₂S₃/Sb₂(S,Se)₃ heterojunction solar cells with a novel wide-bandgap InOCl passivator

Published:2023 Issue:37 Volume:11 Page:19914-19924
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Wang Changxue¹²,Li Dongdong³,Mao Xiaoli²,Wan Lei¹,Cheng Zhen¹,Zhu Jun⁴^ORCID,Hoye Robert L. Z.⁵^ORCID,Zhou Ru¹⁵^ORCID

Affiliation:

1. School of Electrical Engineering and Automation, Hefei University of Technology, Hefei 230009, P. R. China

2. School of Microelectronics, Hefei University of Technology, Hefei 230009, P. R. China

3. School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, P. R. China

4. Academy of OptoElectric Technology, Hefei University of Technology, Hefei 230009, P. R. China

5. Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, South Parks Road, Oxford OX1 3QR, UK

Abstract

A novel wide-bandgap InOCl passivator incorporated between In2S3 buffer layer and Sb2(S,Se)3 absorber enables high performance fully environment-friendly solar cells.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TA/D3TA01736B

Reference58 articles.

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