Catalyst-free heteroepitaxial growth of very long InAs nanowires on Si
Author:
Funder
National Research Foundation of Korea
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference28 articles.
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3. α-FeSi2 as a Buffer Layer for β-FeSi2 Growth: Analysis of Orientation Relationships in Silicide/Silicon, Silicide/Silicide Heterointerfaces;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2020-07
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