Electronic band alignment in AlGaN/GaN high electron-mobility transistors investigated using scanning photocurrent microscopy-Reference-Cited by-同舟云学术

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Electronic band alignment in AlGaN/GaN high electron-mobility transistors investigated using scanning photocurrent microscopy

Published:2019-04 Issue:4 Volume:19 Page:406-410
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Kim Y.C.,Son B.H.,Jeong H.Y.,Park K.H.,Ahn Y.H.^ORCID

Funder

Midcareer Researcher Program

National Research Foundation

MSIP

Human Resources Program in Energy Technology

KETEP

MOTIE

Ministry of Science, ICT and Future Planning

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference39 articles.

1. Comparison of GaN p-i-n and Schottky rectifier performance;Zhan;IEEE Trans. Electron Devices,2001

2. AlGaN/GaN HEMTs-an overview of device operation and applications;Mishra;Proc. IEEE,2002

3. GaN-based RF power devices and amplifiers;Mishra;Proc. IEEE,2008

4. Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors;Jeon;Microelectron. Eng.,2018

5. GaN based transistors for high power applications;Shur;Solid State Electron.,1998

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Drain Schottky contact influence on low-field transport characteristic of AlGaN/GaN heterostructure field-effect transistors;Applied Physics A;2022-05

2. Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors;AIP Advances;2021-11-01

3. Ab initio analytic calculation of point defects in AlGaN/GaN heterointerfaces;Journal of Physics: Condensed Matter;2020-10-19

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