Electrical measurements as early indicators of electromigration failure-Reference-Cited by-同舟云学术

Electrical measurements as early indicators of electromigration failure

Published:1995-01 Issue:1 Volume:35 Page:13-25
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Jones B.K.,Xu Y.Z.,Denton T.C.,Zobbi P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Excess Noise and Reliability of Al-based Thin Films;Chen,1993

2. Microstructure and the Development of Electromigration Damage in Narrow Interconnects;Greer,1992

3. The Measurement of the Electrical Properties of Electromigration Specimens;Jones,1994

4. Characterisation of Electromigration Damage by Multiple Electrical Measurements;Jones;Microelectron. Reliab.,1993

5. Electrical Noise as a Measure of Quality and Reliability in Electron Devices;Jones;Advances in Electronics and Electron Physics,1993

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