Characterisation of electromigration damage by multiple electrical measurements-Reference-Cited by-同舟云学术

Characterisation of electromigration damage by multiple electrical measurements

Published:1993-09 Issue:11-12 Volume:33 Page:1829-1840
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Jones B.K.,Xu Y.Z.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. A Study of Resistance Variations During Electromigration;LaCombe,1985

2. Electromigration Detection by Means of Low Frequency Noise Measurements in Thin-film Interconnection;Chen,1985

3. Detection of Hot Spots in Thin Metal Film Via Thermal Noise Measurements;Massiha;IEEE Electron. Dev. Lett.,1989

4. The Current Noise and Non-linearity of Thick Film Resistors;Bristow,1971

5. Reliability Evaluation of Thick Film Resistors through Measurements of Third Harmonic Index;Kasukabe;Electrocomp. Sci. and Technol.,1981

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