Instabilities in MOS transistors-Reference-Cited by-同舟云学术

Instabilities in MOS transistors

Published:1989-01 Issue:3 Volume:29 Page:371-380
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Stojadinović N.,Dimitrijev S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Amphoteric defects at the Si-SiO2 interface;Chang;Appl Phys. Lett.,1986

2. Effects of Coulomb scattering on silicon surface mobility;Cheng;J. Appl. Phys.,1974

3. Instabilities in MOS Devices;Davis,1981

4. Standardized terminology for oxide charges associated with thermally oxidized silicon;Deal;IEEE Trans. Electron Devices,1980

5. Analysis of CMOS transistor instabilities;Dimitrijev;Solid-State Electron.,1987

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