Gate-Oxide Degradation Monitoring of SiC MOSFETs Based on Transfer Characteristic with Temperature Compensation-Reference-Cited by-同舟云学术

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Gate-Oxide Degradation Monitoring of SiC MOSFETs Based on Transfer Characteristic with Temperature Compensation

Published:2023 Issue: Volume: Page:1-1
ISSN:2332-7782
Container-title:IEEE Transactions on Transportation Electrification
language:
Short-container-title:IEEE Trans. Transp. Electrific.

Author:

Farhadi Masoud¹^ORCID,Vankayalapati Bhanu Teja²^ORCID,Sajadi Rahman¹,Akin Bilal¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Texas at Dallas, Richardson, USA

2. Texas Instruments, Dallas, TX, USA

Funder

Texas Instruments

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Transportation,Automotive Engineering

Link

http://xplorestaging.ieee.org/ielx7/6687316/7098407/10097582.pdf?arnumber=10097582

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On-Chip Concurrent Device Aging Prognosis and Dielectric Failure Detection for GaN Power Devices;IEEE Transactions on Power Electronics;2024-09

2. Third Quadrant Operation of SiC MOSFETs: Comprehensive Analysis and Condition Monitoring Solution;IEEE Transactions on Components, Packaging and Manufacturing Technology;2024-05

3. A Comprehensive Overview of Reliability Assessment Strategies and Testing of Power Electronics Converters;IEEE Open Journal of Power Electronics;2024

4. Reliability Evaluation of SiC MOSFETs Under Realistic Power Cycling Tests;IEEE Power Electronics Magazine;2023-06

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