Reliability Evaluation of SiC MOSFETs Under Realistic Power Cycling Tests-Reference-Cited by-同舟云学术

Reliability Evaluation of SiC MOSFETs Under Realistic Power Cycling Tests

Published:2023-06 Issue:2 Volume:10 Page:49-56
ISSN:2329-9207
Container-title:IEEE Power Electronics Magazine
language:
Short-container-title:IEEE Power Electron. Mag.

Author:

Farhadi Masoud¹,Vankayalapati Bhanu Teja²,Akin Bilal¹^ORCID

Affiliation:

1. University of Texas at Dallas, Richardson, Dallas, TX, USA

2. Texas Instruments, Dallas, TX, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Control and Systems Engineering

Link

http://xplorestaging.ieee.org/ielx7/6570649/10167534/10167542.pdf?arnumber=10167542

Reference14 articles.

1. A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets

2. Fundamentals of Power Semiconductor Devices

3. A New Complete Condition Monitoring Method for SiC Power MOSFETs

4. Quantitative investigation of near interface traps in 4H-SiC MOSFETs via drain current deep level transient spectroscopy;hauck;Proc Eur Conf Silicon Carbide Rel Mater (ECSCRM),2016

5. Temperature-Independent Gate-Oxide Degradation Monitoring of SiC MOSFETs Based on Junction Capacitances

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