Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures part I: Theory-Reference-Cited by-同舟云学术

Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures part I: Theory

Published:1984-01 Issue:3 Volume:24 Page:465-485
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Shoucair F.,Hwang W.,Jain P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. F. Shoucair, W. Hwang and P. Jain, “Electrical Characteristics of LSI MOSFETs at very High Temperatures. Part II: Experiment” to be published.

2. Semiconductors Face the '80s;Lindgren;IEEE Spectrum,1977

3. Hybrid Microcircuitry for 300°C Operation;Palmer;IEEE Trans.,1977

4. Extreme Temperature Range Microelectronics;Palmer;IEEE Trans. Components, Hybrids, Manufacturing and Technology,1978

5. Extension of High-Temperature Electronics;Draper;IEEE Trans. CHMT,1979

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