Temperature-Dependent Gate-Induced Drain Leakages Assessment of Dual-Metal Nanowire Field-Effect Transistor—Analytical Model
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/8694031/08681278.pdf?arnumber=8681278
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