B/N co-doped graphene oxide gel with extremely-high mobility and ION/IOFF for large-area field effect transistors

Author:

Novodchuk I.,Kayaharman M.,Ibrahim K.,Al-Tuairqi S.,Irannejad M.,Abdel-Rahman E.,Sanderson J.,Bajcsy M.,Yavuz M.

Funder

SI

CMC Microsystems

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference43 articles.

1. The rise of graphene;Geim;Nat. Mater.,2007

2. Graphene field-effect transistors;Reddy;J. Phys. D Appl. Phys.,2012

3. Temperature- and thickness-dependent electrical conductivity of few-layer graphene and graphene nanosheets;Fang;Phys. Lett. A Gen. At. Solid State Phys.,2015

4. Direct four-probe measurement of grain-boundary resistivity and mobility in millimeter-sized graphene;Ma;Nano Lett.,2017

5. The Chemistry of Graphene Oxide;Gao,2015

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