Virtual fabrication in modelling 14 nm horizontal double gate bilayer graphene FET NMOS/PMOS
Author:
Publisher
AIP Publishing
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0192735
Reference24 articles.
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3. Realization with Fabrication of Double-Gate MOSFET Based Third Order High Pass Filter
4. Analysis of surface potential for dual-material-double-gate MOSFET based on modeling and simulation
5. B/N co-doped graphene oxide gel with extremely-high mobility and ION/IOFF for large-area field effect transistors
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