High density synthesis of topological point defects in graphene on 6H–SiC(0001¯)-Reference-Cited by-同舟云学术

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High density synthesis of topological point defects in graphene on 6H–SiC(0001¯)

Published:2020-12 Issue: Volume:170 Page:174-181
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Berrahal Quentin,Chacon Cyril,Amara Hakim,Bellec Amandine,Latil Sylvain,Repain Vincent,Rousset Sylvie,Lagoute Jérôme,Girard Yann

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference67 articles.

1. Spectroscopic investigation of defects in two-dimensional materials;Wu;Nanophotonics,2017

2. Localized state and charge transfer in nitrogen-doped graphene;Joucken;Phys. Rev. B,2012

3. Visualizing individual nitrogen dopants in monolayer graphene;Zhao;Science,2011

4. Local atomic and electronic structure of boron chemical doping in monolayer graphene;Zhao;Nano Lett.,2013

5. Electronic properties of chemically doped graphene;Joucken;Phys. Rev. Materials,2019

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modification on Flower Defects and Electronic Properties of Epitaxial Graphene by Erbium;ACS Omega;2023-09-29

2. Growth and local electronic properties of Cobalt nanodots underneath graphene on SiC(0001);Carbon;2023-05

3. Compressed Graphene Assembled Film with Tunable Electrical Conductivity;Materials;2023-01-05

4. Effects of Er atoms on graphitization process and structural defects for epitaxial graphene;Journal of Applied Physics;2022-10-07

5. Early stage nucleation mechanism for SiC(0001) surface epitaxial growth;Journal of Vacuum Science & Technology A;2022-05

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