Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride-Reference-Cited by-同舟云学术

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Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride

Published:2019-03 Issue:1 Volume:27 Page:14-17
ISSN:1230-3402
Container-title:Opto-Electronics Review
language:en
Short-container-title:Opto-Electronics Review

Author:

Izhnin I.I.,Fitsych O.I.,Świątek Z.,Morgiel Y.,Bonchyk O.Yu.,Savytskyy H.V.,Mynbaev K.D.^ORCID,Voitsekhovskii A.V.,Korotaev A.G.^ORCID,Yakushev M.V.^ORCID,Marin D.V.^ORCID,Varavin V.S.,Dvoretsky S.A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Radiation,General Materials Science

Reference12 articles.

1. Progress, challenges, and opportunities for HgCdTe infrared materials and detectors;Lei;Appl. Phys. Rev.,2015

2. Characterization of the microstructure of HgCdTe with p-type doping;Lobre;J. Electron. Mater.,2014

3. Planar p-on-n HgCdTe FPAs by arsenic ion implantation;Mollard;J. Electron. Mater.,2009

4. Status of p-on-n arsenic-implanted HgCdTe technologies;Mollard;J. Electron. Mater.,2011

5. Barrier layer induced channeling effect of As ion implantation in HgCdTe and its influences on electrical properties of p–n junctions;Shi;Appl. Optics,2016

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy;Applied Nanoscience;2020-03-12

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