Characterization of the Microstructure of HgCdTe with p-Type Doping-Reference-Cited by-同舟云学术

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Characterization of the Microstructure of HgCdTe with p-Type Doping

Published:2014-04-30 Issue:8 Volume:43 Page:2908-2914
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Lobre C.,Jouneau P.-H.,Mollard L.,Ballet P.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-014-3147-9.pdf

Reference9 articles.

1. L. Mollard, G. Destefanis, G. Bourgeois, A. Ferron, N. Baier, O. Gravrand, J.P. Barnes, A.M. Papon, F. Milesi, A. Kerlain, and L. Rubaldo, J. Electron. Mater. 40, 1830 (2011).

2. B. Pelliciari, J. Cryst. Growth 86, 146 (1990).

3. P.J. Phillips, M.J. Mills, and M. De Graef, Philos. Mag. 91, 2081 (2011).

4. D.B. Williams and C.B. Carter, Transmission Electron Microscopy A Textbook for Materials Science (Boston: Springer, 2009), pp. 639–662.

5. G. Bahir and R. Kalish, J. Appl. Phys. 54, 3129 (1983).

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