Impedance of MIS Devices Based on nBn Structures from Mercury Cadmium Telluride-Reference-Cited by-同舟云学术

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Impedance of MIS Devices Based on nBn Structures from Mercury Cadmium Telluride

Published:2020-10 Issue:6 Volume:63 Page:907-916
ISSN:1064-8887
Container-title:Russian Physics Journal
language:en
Short-container-title:Russ Phys J

Author:

Voitsekhovskii A. V.,Nesmelov S. N.,Dzyadukh S. M.,Dvoretsky S. A.,Mikhailov N. N.,Sidorov G. Yu.,Yakushev M. V.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

https://link.springer.com/content/pdf/10.1007/s11182-020-02117-0.pdf

Reference37 articles.

1. A. Rogalski, Infrared and Terahertz Detectors, 3rd. ed., Boca Raton: CRC Press, Taylor & Francis Group, (2019).

2. M. A. Kinch, J. Electron. Mater., 44, 2969–2976 (2015).

3. D. A. Reago, S. B. Horn, Jr. J. Campbell, et al., Proc. SPIE, 3701, 108–117 (1999).

4. A. Rogalski, J. Antoszewski, and L. Faraone, J. Appl. Phys., 105, 091101 (2009).

5. I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovsky, et al., Infrared Phys. Technol., 98, 230–235 (2019).

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy;Journal of Communications Technology and Electronics;2023-09

2. Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra;Physica Scripta;2023-05-03

3. II-VI Semiconductor-Based Unipolar Barrier Structures for Infrared Photodetector Arrays;Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors;2023

4. Admittance of MIS Structures Based on nBn Systems of Epitaxial HgCdTe for Detection in the 3–5 μm Spectral Range;Technical Physics Letters;2021-12-16

5. Admittance of barrier nanostructures based on MBE HgCdTe;Applied Nanoscience;2021-01-03

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