Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Cell Biology,Physical and Theoretical Chemistry,Materials Science (miscellaneous),Atomic and Molecular Physics, and Optics,Biotechnology
Link
http://link.springer.com/content/pdf/10.1007/s13204-021-01704-y.pdf
Reference14 articles.
1. Bazovkin VM, Dvoretsky SA, Guzev AA et al (2016) High operating temperature SWIR p(+)–n FPA based on MBE-grown HgCdTe/Si(013). Infr Phys Technol 76:72–74
2. Bommena R, Ketharanathan S, Wijewarnasuriya PS et al (2015) High-performance MWIR hgcdte on Si substrate focal plane array development. J Electron Mater 44:3151–3156
3. Bonchyk OY, Savytskyy HV, Izhnin II et al (2020) Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy. Appl Nanosci 10:4971–4976
4. Gravrand O, Mollard L, Largeron C et al (2009) Study of LWIR and VLWIR focal plane array developments: comparison between p-on-n and different n–on–p technologies on LPE HgCdTe. J Electron Mater 38:1733–1740
5. Guinedor P, Brunner A, Rubaldo L et al (2019) Low-frequency noises and DLTS studies in HgCdTe MWIR photodiodes. J Electron Mater 48:6113–6117
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